PDTC143ZU,115 datasheet

Маркировка

PDTC143ZU,115
Производитель

NXP Semiconductors
Описание

NXP Semiconductors PDTC143ZU,115 Collector- Emitter Voltage Vceo Max: 50 V Configuration: Single Current - Collector (ic) (max): 100mA Current - Collector Cutoff (max): 1?µA Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 5V Emitter- Base Voltage Vebo: 10 V ID_COMPONENTS: 1948028 Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Peak Dc Collector Current: 100 mA Power - Max: 200mW Power Dissipation: 200 mW Resistor - Base (r1) (ohms): 4.7K Resistor - Emitter Base (r2) (ohms): 47K Transistor Polarity: NPN Transistor Type: NPN - Pre-Biased Typical Input Resistor: 4.7 KOhms Typical Resistor Ratio: 0.1 Vce Saturation (max) @ Ib, Ic: 100mV @ 250?µA, 5mA Voltage - Collector Emitter Breakdown (max): 50V Product Category: Transistors Switching - Resistor Biased RoHS: yes DC Collector/Base Gain hfe Min: 100 Collector- Emitter Voltage VCEO Max: 50 V Peak DC Collector Current: 100 mA Brand: NXP Semiconductors Emitter- Base Voltage VEBO: 10 V Factory Pack Quantity: 3000 Part # Aliases: PDTC143ZU T/R Other Names: 934057544115, PDTC143ZU T/R
Количество страниц

17 шт.
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160,72 KB